Hynix has released a 40-nm 2 GB chips DDR3 DRAM
Hynix Semiconductor announced its 2-gigabit chips DDR3 DRAM, made under rules 40-nm process technology. These products have been tested by Intel, and Hynix has already started their serial production. Until the end of this year’s testing procedure will also take place and 40-nm RDIMM modules are DDR3.
Among the new products Hynix, already approved by Intel, – 2-GB chips DDR3 SDRAM, 4 GB SO-DIMM DDR3 modules and 2 GB UDIMM modules DDR3. New work at a frequency of 1333 MHz at a voltage of 1.5 volts. The presented chip for maximum data transfer rate at a frequency of 1867 MHz, with 16-bit I / O controller and the bandwidth of 3.7 Gbit / sec.
Hynix argues that the performance 40-nm 2-Gb DDR3 chips increased by more than 60% compared with the similar product, made of 50-nm process technology. This power consumption decreased by 40%. 2-gigabit DDR3 DRAM chips are designed for high-performance servers.
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