Z-RAM is ready to replace DRAM?
The company Innovative Silicon, Inc (ISi) announced two major breakthroughs in its memory technology, Z-RAM (zero-capacitor RAM). Recall, Z-RAM is different from the traditional lack of memory capacitor for storing information. Recording and storage of data in this technology based on the so-called effect of “floating body” (FB, floating body).
ISi engineers succeeded in reducing the supply voltage of Z-RAM to a level below 1 V. This is the lowest value among the other memory technologies with the “floating body”. New developments have enabled the first time to level on this indicator FB-memory with traditional DRAM-memory. The second breakthrough is the realization of Z-RAM based on bulk silicon using three-dimensional structures (non-planar) transistors are widely used by manufacturers of DRAM-memory. This allows you to abandon the use of substrates SOI (silicon on insulator), which are more expensive.
Updated Z-RAM technology was implemented in a test chip company Hynix Semiconductor. As the ISi, the chip has demonstrated that Z-RAM is a good chance to replace traditional memory and has a lower cost than any DRAM-technology using the process technology with design rules of 40 nm and below. Z-RAM is comparable to DRAM on power consumption and speed.
As President and CEO Innovative Silicon, Mark-Eric Jones (Mark-Eric Jones), DRAM has been the main memory technology for over forty years, but it was time to give way to best “no capacitor” Z-RAM. The representative of Hynix Semiconductor believes that ISi managed to remove the shortcomings and overcome the key barriers that stand in the way of all memory technologies with the “floating body”.
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